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1 isotropic etching
ізотропне травлення. Обробка матеріалу травником, при якій травлення відбувається у всіх напрямах з однаковими швидкостями.English-Ukrainian dictionary of microelectronics > isotropic etching
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2 etching
травлення (див. т-ж etch) - anisotropic etching
- anode etching
- batch etching
- blanket etching
- chemically assisted etching
- concentration dependent etching
- crystallographically sensitive etching
- deep reactive ion etching DRIE
- deep reactive ion etching
- differential etching
- digital etching
- diode ion etching
- diode etching
- dip etching
- directional etching
- dislocation etching
- dry process etching
- dry etching
- electron-beam induced etching
- excessive etching
- exciraer laser etching
- gas-phase plasma-assisted etching
- high-frequency ion etching
- hydrogen reactive ion etching
- ion etching
- ion-assisted plasma etching
- ion-beam induced etching
- isotropic etching
- jet etching
- laser-enhanced etching
- laser-induced pattern projection etching
- laser radical etching
- lateral etching
- lift-off etching
- light-induced etching
- low-pressure plasma etching
- low-pressure etching
- masked etching
- maskless etching
- maskless laser etching
- mesa etching
- microwave plasma etching
- microwave etching
- mild etching
- nonundercutting etching
- orientation-dependent etching
- oxygen gas plasma etching
- permeation etching
- photochemical etching
- photoelectrochemical etching
- photo-enhanced chemical dry etching
- photoexcited etching
- photo-initiated etching
- photoresist-masked etching
- plasma reactor etching
- plasma etching
- post etching
- preferential etching
- radical plasma etching
- radical etching
- radio-frequency plasma etching
- reactive ion etching
- regenerative etching
- resistless etching
- selective etching
- sharp etching
- sideways etching
- single-step laser etching
- spray etching
- sputter etching
- steady-state etching
- synchrotron radiation-assisted etching
- taper etching
- tetrode ion etching
- tetrode etching
- triode ion etching
- triode etching
- undercuttingetching
- undercutetching
- UV laser etching
- vacuum ultraviolet-assisted etching
- vertical etching
- VUV-assisted etching
- wet chemical etching
- wet etching
- zero-undercut etching -
3 etch
1. ім.1) травник (див. тж etchant)2. дієсл. травити - to etch into
- to etch out
- acid etch
- anisotropic etch
- buffered etch
- buffered охide etch BOE
- buffered охide etch
- caustic etch
- chemical etch
- crystal-orientation dependent etch
- gaseousetch
- gasetch
- isotropic etch
- orientation dependent etch
- oxide etch
- photoresist-controlled etch
- planar plasma etch
- step etch
- stress relief etch
- trench etch
- V-groove etch
- wet etch
См. также в других словарях:
Isotropic etching — In semiconductor technology isotropic etching is non directional removal of material from a substrate via a chemical process using an etchant substance. The etchant may be a corrosive liquid or a chemically active ionized gas, known as a… … Wikipedia
isotropic etching — izotropinis ėsdinimas statusas T sritis radioelektronika atitikmenys: angl. isotropic etching vok. isotropes Ätzen, n rus. изотропное травление, n pranc. décapage isotrope, m … Radioelektronikos terminų žodynas
Etching (microfabrication) — Etching tanks used to perform Piranha, Hydrofluoric acid or RCA clean on 4 inch wafer batches at LAAS technological facility in Toulouse, France Etching is used in microfabrication to chemically remove layers from the surface of a wafer during… … Wikipedia
Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… … Wikipedia
Dry etching — refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes… … Wikipedia
Reactive-ion etching — (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High energy ions from the plasma… … Wikipedia
Microelectromechanical systems — (MEMS) (also written as micro electro mechanical, MicroElectroMechanical or microelectronic and microelectromechanical systems) is the technology of very small mechanical devices driven by electricity; it merges at the nano scale into… … Wikipedia
Fluorine — Fluorine, la. fluorum, meaning to flow ), is the chemical element with the symbol F and atomic number 9. Atomic fluorine is univalent and is the most chemically reactive and electronegative of all the elements. In its elementally isolated (pure)… … Wikipedia
décapage isotrope — izotropinis ėsdinimas statusas T sritis radioelektronika atitikmenys: angl. isotropic etching vok. isotropes Ätzen, n rus. изотропное травление, n pranc. décapage isotrope, m … Radioelektronikos terminų žodynas
isotropes Ätzen — izotropinis ėsdinimas statusas T sritis radioelektronika atitikmenys: angl. isotropic etching vok. isotropes Ätzen, n rus. изотропное травление, n pranc. décapage isotrope, m … Radioelektronikos terminų žodynas
izotropinis ėsdinimas — statusas T sritis radioelektronika atitikmenys: angl. isotropic etching vok. isotropes Ätzen, n rus. изотропное травление, n pranc. décapage isotrope, m … Radioelektronikos terminų žodynas
